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| inchange semiconductor product specification silicon npn power transistors BUH515D description ? with to-3pml package ? high voltage ? high speed switching ? built-in damper diode applications ? for use in horizontal deflection circuits of large screen color tv receivers pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 8 a i cm collector current -peak 15 a i b base current (dc) 5 a i bm base current -peak 8 a p tot total power dissipation t c =25 ?? 50 w t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUH515D characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a ;i b =1.25a 1.5 v v besat base-emitter saturation voltage i c =5a ;i b =1.25a 1.3 v i ces-1 collector cut-off current v ce =1300v ; v be =0 10 | a i ces-2 collector cut-off current v ce =1500v ; v be =0 t j =125 ?? 0.2 2 ma i ebo emitter cut-off current v eb =5v; i c =0 200 ma h fe dc current gain i c =5a ; v ce =5v 5 10 v f diode forward voltage i f =5a 2 v switching times t s storage time 2.4 3.6 | s t f fall time i c =5a;i b1 =1.5a;-i b2 =2.5a; v cc =400v 170 260 ns thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 2.5 ?? /w inchange semiconductor product specification 3 silicon npn power transistors BUH515D package outline fig.2 outline dimensions |
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